Analysing NBTI Impact on SRAMs with Resistive Defects-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Analysing NBTI Impact on SRAMs with Resistive Defects

Published:2017-10 Issue:5 Volume:33 Page:637-655
ISSN:0923-8174
Container-title:Journal of Electronic Testing
language:en
Short-container-title:J Electron Test

Author:

Martins M. T.,Medeiros G. C.,Copetti T.,Vargas F. L.,Bolzani Poehls L. M.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Link

http://link.springer.com/article/10.1007/s10836-017-5685-6/fulltext.html

Reference16 articles.

1. Agarwal M, Paul BC, Ming Z, Mitra S (2007) Circuit failure prediction and its application to transistor aging. Proc. 25th IEEE VLSI Test Symposium, pp 277–286

2. Agarwal M, Balakrishnan V, Bhuyan A, Kim K, Paul BC (2008) Optimized circuit failure prediction for aging: practicaity and promise. Proc. IEEE Inteernational Test Conference, 2008 (ITC 2008), Santa Clara. https://doi.org/10.1109/TEST.2008.4700619

3. Alam MA, Roy K, Augustine C (2008) Reliability- and process-variation aware design of integrated circuits — a broader perspective. Proc. IEEE International Reliability Physics Symposium (IRPS), Monterey. https://doi.org/10.1109/IRPS.2011.5784500

4. Boning D, Nassif S (2000) Models of process variations in device and interconnect, design of high performance microprocessor circuits. IEEE Press, pp 98–115. https://doi.org/10.1109/9780470544365.ch6

5. Borkar S (2005) Designing reliable systems from unreliable components: the challenges of transistor variability and degradation. IEEE Micro 25(6):10–16

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast Methods for Studying the Effect of Electrical Stress on SiO2 Dielectrics in Metal-Oxide-Semiconductor Field-Effect Transistors;Instruments and Experimental Techniques;2023-12

2. Efficient Resistive Defect Detection Technique for Performance Enhancement of Static Random Access Memory;Lecture Notes in Electrical Engineering;2021-11-09

3. On-chip weak resistive defect diagnosis with performance enhancement in 45 nm technology static random access memory;Microelectronics Journal;2021-09

4. Investigation of the Impact of BTI Aging Phenomenon on Analog Amplifiers;Journal of Electronic Testing;2021-08

5. On-Chip Area and Test Time Effective Weak Resistive Open Defect Detection Technique for Cache Memory;2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS);2021-02-21

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3