High voltage, high current lateral devices

Author:

Vaes H.M.J.,Appels J.A.

Publisher

IRE

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A New Multi-Dimensional Depletion Concept of Homogenization Field Devices;IEEE Electron Device Letters;2023-10

2. Performance and Reliability Co-design of Ultra High Voltage LDMOS Devices;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

3. An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

4. Experiments of Homogenization Field LDMOS With Trench-Stopped Depletion;IEEE Transactions on Electron Devices;2022-05

5. An analytical model for the drain—source breakdown voltage of RF LDMOS power transistors with a Faraday shield;Journal of Semiconductors;2012-04

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