Experiments of Homogenization Field LDMOS With Trench-Stopped Depletion-Reference-Cited by-同舟云学术

Experiments of Homogenization Field LDMOS With Trench-Stopped Depletion

Published:2022-05 Issue:5 Volume:69 Page:2528-2533
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Wentong¹^ORCID,Zhu Le¹,Tian Fengrun¹,Luo Jie²,He Nailong³,Zhang Zhili³,Zhang Sen³,Zhang Jinping¹^ORCID,Qiao Ming¹^ORCID,Li Zhaoji¹,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

2. School of Electronic Information and Electrical Engineering, Chengdu University, Chengdu, China

3. Technology Development Department, CSMC Technologies Corporation, Wuxi, China

Funder

Key Realm Research and Development Program of Guangdong Province, China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09737685.pdf?arnumber=9737685

Reference33 articles.

1. A 0.35 ?m 700 V BCD technology with self-isolated and non-isolated ultra-low specific on-resistance DB-nLDMOS;mao;Proc Int Symp Power Semiconductor Devices,2013

2. Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

3. Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

4. A high density, low on-resistance 700 V class trench offset drain LDMOSFET (TOD-LDMOS);teranishi;IEDM Tech Dig,2003

5. Experiments of a Lateral Power Device With Complementary Homogenization Field Structure

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1. Novel Bulk Homogenization Field Devices With Reducing Process Difficulty;IEEE Electron Device Letters;2024-07

2. A New Multi-Dimensional Depletion Concept of Homogenization Field Devices;IEEE Electron Device Letters;2023-10

3. New Insight Into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation;IEEE Transactions on Nuclear Science;2023-04

4. A New Type of Homogenization Field Power Semiconductor Devices;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25