A New Multi-Dimensional Depletion Concept of Homogenization Field Devices-Reference-Cited by-同舟云学术

A New Multi-Dimensional Depletion Concept of Homogenization Field Devices

Published:2023-10 Issue:10 Volume:44 Page:1708-1711
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Wentong¹^ORCID,He Jiamin²,Wu Qiyi²,He Nailong³,Zhang Sen³,Qiao Ming²^ORCID,Li Zhaoji²,Zhang Bo²^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

3. Technology Development Department, CSMC Technologies Corporation, Wuxi, China

Funder

National Natural Science Foundation of China

National Laboratory of Science and Technology on Analog Integrated Circuit

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10265125/10234398.pdf?arnumber=10234398

Reference22 articles.

1. Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit

2. High-Voltage 3-D Partial SOI Technology Platform for Power Integrated Circuits

3. Optimization and Experiments of Lateral Semi-Superjunction Device Based on Normalized Current-Carrying Capability

4. Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect

5. Experimental Study of 600 V Accumulation-Type Lateral Double-Diffused MOSFET With Ultra-Low On-Resistance