An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process
Author:
Affiliation:
1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,P. R. China
2. CSMC Technologies Co. Ltd,Technology Development II,Wuxi,P.R. China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813626.pdf?arnumber=9813626
Reference14 articles.
1. A new 800 V lateral MOSFET with dual conduction paths;disney;International Symposium on Power Semiconductor Devices and ICs,2001
2. A Novel Ultralow R ON,sp Triple RESURF LDMOS With Sandwich n-p-n Layer
3. Partial SOI as a HV platform technology for Power Integrated Circuits;hölke;International Symposium on Power Semiconductor Devices and ICs,2020
4. A Cost Effective and Highly Manufacturable Approach to Extend a BCD 70V Technology to 200V
5. A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process
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