A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process-Reference-Cited by-同舟云学术

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A 150V novel high-voltage LDMOS in a 0.18um BCD plug-in process

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Chen Yen-Ming,Lee Chiu-Ling,Tsai Min-Hsuan,Lee Chiu-Te,Wang Chih-Chong

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393670.pdf?arnumber=8393670

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Lateral Power MOSFET with Ultra-low Energy Consumption and Extraordinary Robustness;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

2. Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology;IEEE Electron Device Letters;2023-05

3. An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

4. Electrostatic Discharge Sensing of Concentric Circles of Poly2 with Different Potentials and Discrete High-voltage P-well Modulation on Circular Ultrahigh-voltage N-channel Laterally Diffused MOSFET Devices;Sensors and Materials;2022-05-17

5. New Strained Silicon-On-Insulator Lateral MOSFET With Ultralow ON-Resistance by Si1-xGex P-Top Layer and Trench Gate;IEEE Electron Device Letters;2021-06

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