Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates-Reference-Cited by-同舟云学术

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Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
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Author:

Batail E.,Monfray S.,Tabone C.,Kermarrec O.,Damlencourt JF.,Gautier P.,Rabille G.,Arvet C.,Loubet N.,Campidelli Y.,Hartmann JM.,Pouydebasque A.,Delaye V.,Le Royer C.,Ghibaudo G.,Skotnicki T.,Deleonibus S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796704.pdf?arnumber=4796704

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al₂O₃/GeO_x Gate Stacks;IEEE Journal of the Electron Devices Society;2023

2. Growth of high quality Ge-on-Si layer by using an ultra-thin LT-Si buffer in RPCVD;IOP Conference Series: Materials Science and Engineering;2019-04-26

3. Demonstration of ultra-thin buried oxide germanium-on-insulator MOSFETs by direct wafer bonding and polishing techniques;Applied Physics Letters;2016-07-11

4. 300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology;Japanese Journal of Applied Physics;2016-03-24

5. Ge Condensation and Its Device Application;Photonics and Electronics with Germanium;2015-05-08

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