Growth of high quality Ge-on-Si layer by using an ultra-thin LT-Si buffer in RPCVD
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
https://iopscience.iop.org/article/10.1088/1757-899X/504/1/012020/pdf
Reference15 articles.
1. Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)
2. Si-based optoelectronic devices for optical communications
3. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
4. Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain Modulation of Selectively and/or Globally Grown Ge Layers;Nanomaterials;2021-05-28
2. Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si;Materials Science in Semiconductor Processing;2020-08
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