Demonstration of ultra-thin buried oxide germanium-on-insulator MOSFETs by direct wafer bonding and polishing techniques
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4955486
Reference18 articles.
1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
2. High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation
3. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
4. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
5. Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates
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