300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology-Reference-Cited by-同舟云学术

300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology

Published:2016-03-24 Issue:4S Volume:55 Page:04EB10
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Widiez Julie,Sollier Sébastien,Baron Thierry,Martin Mickaël,Gaudin Gweltaz,Mazen Frédéric,Madeira Florence,Favier Sylvie,Salaun Amélie,Alcotte Reynald,Beche Elodie,Grampeix Helen,Veytizou Christelle,Moulet Jean-Sébastien

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EB10/pdf

Reference29 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

3. Nonstationary electron/hole transport in sub-0.1 μm MOS devices: correlation with mobility and low-power CMOS application

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