Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects-Reference-Cited by-同舟云学术

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Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
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Author:

Sato M.,Umezawa N.,Shimokawa J.,Arimura H.,Sugino S.,Tachibana A.,Nakamura M.,Mise N.,Kamiyama S.,Morooka T.,Eimori T.,Shiraishi K.,Yamabe K.,Watanabe H.,Yamada K.,Aoyama T.,Nabatame T.,Nara Y.,Ohji Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796629.pdf?arnumber=4796629

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack;IEEE Transactions on Electron Devices;2023-04

2. Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability;Solid-State Electronics;2017-09

4. The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET;Microelectronics Reliability;2013-02

5. Rare-Earth Oxides as High-k Gate Dielectrics for Advanced Device Architectures;High-k Gate Dielectrics for CMOS Technology;2012-08-23

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