Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)-Reference-Cited by-同舟云学术

Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Narita Tetsuo¹,Kikuta Daigo¹,Ito Kenji¹,Shoji Tomoyuki¹,Mori Tomohiko¹,Yamaguchi Satoshi¹,Kimoto Yasuji¹,Tomita Kazuyoshi²,Kanechika Masakazu²,Kondo Takeshi²,Uesugi Tsutomu²,Kojima Jun²,Suda Jun²,Nagasato Yoshitaka³,Ikeda Satoshi³,Watanabe Hiroki⁴,Kosaki Masayoshi⁵,Oka Tohru⁵

Affiliation:

1. Toyota Central R&D Labs., Inc.,Nagakute,Aichi,Japan,480-1192

2. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University,Nagoya,Japan,464-8601

3. MIRISE Technologies Corporation,Nisshin,Aichi,Japan,470-0111

4. DENSO CORPORATION,Nisshin,Aichi,Japan,470-0111

5. TOYODA GOSEI Co., Ltd,Ama,Aichi,Japan,490-1207

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118047.pdf?arnumber=10118047

Reference48 articles.

1. Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing