An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric-Reference-Cited by-同舟云学术

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An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Moens P.,Liu C.,Banerjee A.,Vanmeerbeek P.,Coppens P.,Ziad H.,Constant A.,Li Z.,De Vleeschouwer H.,Roig-Guitart J.,Gassot P.,Bauwens F.,De Backer E.,Padmanabhan B.,Salih A.,Parsey J.,Tack M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6848890/6855954/06856054.pdf?arnumber=6856054

Cited by 68 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer;Micromachines;2023-06-10

2. Research Progress and Development Prospects of Enhanced GaN HEMTs;Crystals;2023-06-04

3. Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

4. Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

5. Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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