Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)
Author:
Affiliation:
1. Universite Grenoble Alpes,CEA, LETI,Grenoble,France,F-38000
2. STMicroelectronics,R&D Department,Catania,Italy,95121
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118180.pdf?arnumber=10118180
Reference28 articles.
1. Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage
2. Stability and Reliability of Lateral GaN Power Field-Effect Transistors
3. A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs
4. Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs
5. Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN;IEEE Transactions on Electron Devices;2024-09
2. Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications;IEEE Transactions on Device and Materials Reliability;2024-09
3. Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature;IEEE Transactions on Device and Materials Reliability;2024-09
4. A Geometrically Scalable Lumped Model for Spiral Inductors in Radio Frequency GaN Technology on Silicon;Electronics;2024-07-07
5. Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests;Applied Physics Express;2024-07-01
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