Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN-Reference-Cited by-同舟云学术

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Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN

Published:2024-09 Issue:9 Volume:71 Page:5212-5217
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Filho Walter Gonçalez¹^ORCID,Borga Matteo¹^ORCID,Geens Karen¹^ORCID,Khan Md Arif¹^ORCID,Cingu Deepthi¹^ORCID,Chatterjee Urmimala¹,Decoutere Stefaan¹^ORCID,Knaepen Werner²,Kizir Seda²,Arnou Panagiota²,Bakeroot Benoit³^ORCID

Affiliation:

1. Interuniversity Microelectronics Centre (IMEC), Leuven, Belgium

2. ASM, Leuven, Belgium

3. CMST, IMEC, Gent, Belgium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10605990.pdf?arnumber=10605990

Reference35 articles.

1. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

2. Materials and processing issues in vertical GaN power electronics

3. Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II

4. Leakage and breakdown mechanisms of GaN vertical power FinFETs

5. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices

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