Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature-Reference-Cited by-同舟云学术

Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature

Published:2024-09 Issue:3 Volume:24 Page:414-421
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Rathaur Shivendra K.¹^ORCID,Hieu Le Trung²^ORCID,Yang Tsung-Ying³^ORCID,Tsai Shang Hua⁴,Lin Wen Yu⁵,Dixit Abhisek¹^ORCID,Chang Edward Yi⁶^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India

2. Wide Bandgap Compound Semiconductor Research Center, Industry Academia Innovation School, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan

3. International College of Semiconductor Technology, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan

4. Wellywave Semiconductors, Hsinchu, Taiwan

5. New Product Technology Division, Wafer Works Corporation, Taoyuan, Taiwan

6. Department of Materials Science and Engineering, International College of Semiconductor Technology, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7298/10667659/10594797.pdf?arnumber=10594797

Reference33 articles.

1. Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

2. Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

3. Positive and negative threshold voltage instabilities in GaN-based transistors

4. High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al₂O₃, Ferro-Electric Charge-Trap (FEG) GaN-HEMT

5. Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate