High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al<sub>2</sub>O<sub>3</sub>, Ferro-Electric Charge-Trap (FEG) GaN-HEMT-Reference-Cited by-同舟云学术

High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al₂O₃, Ferro-Electric Charge-Trap (FEG) GaN-HEMT

Published:2023-09 Issue:9 Volume:70 Page:4584-4590
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rathaur Shivendra K.¹^ORCID,Wu Jui-Sheng²^ORCID,Yang Tsung-Ying²^ORCID,Amin Asifa¹^ORCID,Dixit Abhisek¹^ORCID,Chang Edward Yi³^ORCID

Affiliation:

1. Department of Electrical Engineering, IIT Delhi, New Delhi, India

2. Department of Materials Science and Engineering and International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. Department of Materials Science and Engineering, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10192522.pdf?arnumber=10192522

Reference39 articles.

1. Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

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4. Long term stability of enhancement mode GaN power devices;wu,2016

5. Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

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