Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs-Reference-Cited by-同舟云学术

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

Published:2016-04 Issue:4 Volume:37 Page:474-477
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Meneghini Matteo,Rossetto Isabella,Bisi Davide,Ruzzarin Maria,Van Hove Marleen,Stoffels Steve,Wu Tian-Li,Marcon Denis,Decoutere Stefaan,Meneghesso Gaudenzio,Zanoni Enrico

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7438958/07407598.pdf?arnumber=7407598

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