Degradation analysis of GaN-based high–electron-mobility transistors under different stresses in semi-on state conditions
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Published:2024-10
Issue:
Volume:220
Page:108977
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ISSN:0038-1101
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Container-title:Solid-State Electronics
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language:en
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Short-container-title:Solid-State Electronics
Author:
Wen Qian,
Guo Chunsheng,
Zhang Meng,
Zheng Xiang,
Feng Shiwei,
Zhang YaminORCID