Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode-Reference-Cited by-同舟云学术

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Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

Published:2013-02 Issue:2 Volume:34 Page:214-216
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Jae-Gil,Park Bong-Ryeol,Cho Chun-Hyung,Seo Kwang-Seok,Cha Ho-Young

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6417986/06413168.pdf?arnumber=6413168

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3. Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer;IEEE Transactions on Electron Devices;2024-05

4. β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV;Transactions on Electrical and Electronic Materials;2024-04-03

5. A Pseudo‐Junction Barrier Schottky Diode in p‐GaN/AlGaN/GaN High Electron Mobility Transistor Epitaxial Layers;physica status solidi (a);2024-01-16

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