Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations
Author:
Affiliation:
1. Univ. Grenoble Alpes,CEA, LETI,Grenoble,France,F-38054
2. University of Bordeaux,IMS Laboratory, CNRS UMR 5218,Talence,France,F-33400
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147642.pdf?arnumber=10147642
Reference13 articles.
1. High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique
2. Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces
3. On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
4. A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures
5. An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric
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1. Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs;Electronics;2024-06-15
2. Impact of the recessed gate depth on the GaN metal-oxide-semiconductor high electron mobility transistor performances: New insights on mobility extraction;Journal of Applied Physics;2024-05-01
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