Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces-Reference-Cited by-同舟云学术

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Published:2020-12-14 Issue:24 Volume:117 Page:242104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ando Yuto¹^ORCID,Nagamatsu Kentaro²,Deki Manato¹³,Taoka Noriyuki¹,Tanaka Atsushi⁴⁵,Nitta Shugo⁴^ORCID,Honda Yoshio⁴,Nakamura Tohru⁴⁶,Amano Hiroshi³⁴⁵⁷

Affiliation:

1. Department of Electronics, Nagoya University, Furo-Cho, Chikusa-ku, 464-8603 Nagoya, Japan

2. Institute of Post-LED Photonics, Tokushima University, 2-1 Minami-Josanjima, 770-8506 Tokushima, Japan

3. Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, 464-8603 Nagoya, Japan

4. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-Cho, Chikusa-ku, 464-8601 Nagoya, Japan

5. National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Japan

6. Research Center for Micro-Nano Technology, Hosei University, 3-11-15 Midorimachi, 184-0003 Koganei, Japan

7. Akasaki Research Center, Nagoya University, Furo-Cho, Chikusa-ku, 464-8603 Nagoya, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0028516

Reference33 articles.

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5. Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

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