Study on the Fabrication of Uv Led Based on Au/I-Aln/N-Gan Structure and the Effect of Operating Temperature on the Carrier Transmission and Electroluminescence Characteristics

Author:

Zhao Yang,Zhang Jiahui,Song Chengle,Xiang Guojiao,Jiao Chenfei,Xin Meibo,Dong Fujing,Huang Zhikang,Wang Mingkun,Wang Hui

Publisher

Elsevier BV

Reference30 articles.

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2. Comparison of acetaminophen degradation in UV-LED-based advance oxidation processes: Reaction kinetics, radicals contribution, degradation pathways and acute toxicity assessment;B Li;Sci Total Environ,2020

3. Decomposition of organic chemicals by zeolite-TiO 2 nanocomposite supported onto low density polyethylene film under UV-LED powered by solar radiation;M R Eskandarian;Appl Catal B Environ,2016

4. Self-powered MoS 2 /n-type GaN heterojunction photodetector with broad spectral response in ultraviolet-visible-near-infrared range;V Janardhanam;Sens Actuators Phys,2023

5. High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films;Y R Koh;Phys Rev Mater,2021

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