Deep Insights into Recessed Gate MOS-HEMT Technology for Power Applications

Author:

Mohamad B.1,Royer C. Le1,Rigaud-Minet F.1,Piotrowicz C.1,Paes Pinto Rocha P. Fernandes1,Leurquin C.1,Vandendaele W.1,Escoffier R.1,Buckley J.1,Bécu S.1,Biscarrat J.1,Gwoziecki R.1

Affiliation:

1. Univ. Grenoble Alpes, CEA, Leti,Grenoble,France,F-38000

Publisher

IEEE

Reference9 articles.

1. Impact of Post-Deposition Anneal on ALD Al2O3/etched GaN Interface in Gate-First MOSc-HEMT Process Flow;fernandes paes pinto rocha;GaN Marathon,2022

2. A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures

3. Recent Advances in GaN Power Devices Development at CEA-LETI;gwoziecki;GaN Marathon,2022

4. Vertical Current Temperature Analysis of GaN-on-Si Epitaxy through Analytical Modelling;rigaud-minet;SSDM,2022

5. 600V CoolGaN™ enhancement-mode Power Transistor;rev 2 12,0

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