A novel carrier accumulating structure for 1200V IGBTs without negative capacitance and decreasing breakdown-voltage
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393710.pdf?arnumber=8393710
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimized Trench IGBT With Dummy Gate and Buried n-Type CS Layer for Substantial Reduction of Power Loss and EMI Noise;IEEE Transactions on Electron Devices;2024
2. Device Design Direction of CSTBT for Low Loss and EMI Noise;IEEE Transactions on Electron Devices;2023-12
3. Novel Diode Structure for Ultra-Law-Loss RC-IGBTs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
4. A Novel IGBT with Variable Conductance Path Realizing Both Low $V_{on}$ and Turn-off Loss;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
5. Design of 1200-V RC-IGBT for TOYOTA's 5th generation HEV/PHEV systems;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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