Design of 1200-V RC-IGBT for TOYOTA's 5<sup>th</sup> generation HEV/PHEV systems-Reference-Cited by-同舟云学术

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Design of 1200-V RC-IGBT for TOYOTA's 5^th generation HEV/PHEV systems

Published:2023-05-28 Issue: Volume: Page:
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Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Okawara Jun¹,Senoo Masaru¹,Nishiwaki Tsuyoshi²,Yamashita Yusuke³,Machida Satoru³,Kagata Yuma¹,Konishi Masaki¹

Affiliation:

1. DENSO CORPORATION,Aichi,Aichi,Japan

2. MIRISE Technologies Corporation,Toyota,Aichi,Japan

3. Toyota Central R&D Labs., Inc.,Nagakute,Aichi,Japan

Funder

Toyota Motor Corporation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147591.pdf?arnumber=10147591

Reference5 articles.

1. Power Device Evolution Challenging to Silicon Material Limit (Invited)

2. Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)

3. Development of power control unit for a newly developed hybrid electric system;aono;Proceedings of 2022 JSAE Congress (Autumn),0

4. A novel carrier accumulating structure for 1200V IGBTs without negative capacitance and decreasing breakdown-voltage

5. 1200V reverse conducting IGBT

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