Optimized Trench IGBT With Dummy Gate and Buried n-Type CS Layer for Substantial Reduction of Power Loss and EMI Noise-Reference-Cited by-同舟云学术

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Optimized Trench IGBT With Dummy Gate and Buried n-Type CS Layer for Substantial Reduction of Power Loss and EMI Noise

Published:2024 Issue: Volume: Page:1-9
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Jinping¹^ORCID,Liu Yazheng²,Deng Haonan²,Wang Kang²,Zhang Bo²^ORCID

Affiliation:

1. National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. National Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, Chengdu, China

Funder

Nanjing Science and Technology Program, China

Guangdong Basic and Applied Basic Research Foundation, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/4358746/10639536.pdf?arnumber=10639536

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