A Novel IGBT with Variable Conductance Path Realizing Both Low $V_{on}$ and Turn-off Loss-Reference-Cited by-同舟云学术

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A Novel IGBT with Variable Conductance Path Realizing Both Low $V_{on}$ and Turn-off Loss

Published:2023-05-28 Issue: Volume: Page:
ISSN:
Container-title:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Yang Yuxiao¹,Chen Wanjun¹,Sun Xinqi¹,Xu Xiaorui¹,Xia Yun¹,Liu Chao¹,Li Zhaoji¹,Zhang Bo¹,Wei Meng²,Zhang Ping²,Ren Zhong³

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China

2. Sichuan Aerospace Liaoyuan Science and Technology Co., LTD,Chengdu,China

3. China Academy of Aerospace Science and Innovation,Bejing,China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147482.pdf?arnumber=10147482

Reference11 articles.

1. A novel carrier accumulating structure for 1200V IGBTs without negative capacitance and decreasing breakdown-voltage

2. Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application

3. The 3.3kV Semi-SuperJunction IGBT for increased cosmic ray induced breakdown immunity

4. An Ultralow Loss Insulated Gate Bipolar Transistor With Emitter Dual Injection

5. A Thermal Twin Modeling Method of Press Pack IGBT Based on Power Loss

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