Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches-Reference-Cited by-同舟云学术

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Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

Published:2014-07 Issue:7 Volume:61 Page:2378-2386
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ambrogio Stefano,Balatti Simone,Gilmer David C.,Ielmini Daniele

Funder

Intel Corporation

Fondazione Cariplo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6837542/06824812.pdf?arnumber=6824812

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