1. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V;Tsunoda,2007
2. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM;Lee,2008
3. 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation;Govoreanu,2011
4. Highly compact 1T-1R architecture (4F2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation;Wang,2012
5. Resistive switching random access memory — Materials, device, interconnects, and scaling considerations;Wu,2012