Compact Modeling of Resistive Switching Memory (RRAM) With Voltage and Temperature Dependences
Author:
Affiliation:
1. Politecnico di Milano and IU.NET,Dipartimento di Elettronica, Informazione e Bioingegneria (DEIB),Milano,Italy
2. Aarhus University,Department of Electrical and Computer Engineering,Denmark
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10343386/10343419/10343984.pdf?arnumber=10343984
Reference15 articles.
1. In-memory computing with resistive switching devices
2. In-Memory Computing for Machine Learning and Deep Learning
3. Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
4. Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics
5. Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior
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