Thermometry Across Switching Oxide Layer in ReRAM Device
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-1571-8_11
Reference8 articles.
1. P.Y. Chen, S. Yu, Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design. IEEE Trans. Electron Devices 62(12), 4022–4028 (2015)
2. J.B. Roldán, G. González-Cordero, R. Picos, E. Miranda, F. Palumbo, M.E. Jiménez-Molinos, D. Maldonado, S.B. Baldoma, M.M.A. Chawa, C. Benito, S.G. Stavrinides, J. Sune, L.O. Chua, On the thermal models for resistive random access memory circuit simulation. Nanomaterials 11(5), 1261 (2021)
3. D. Panda, P.P. Sahu, T.Y. Tseng, A collective study on modeling and simulation of resistive random access memory. Nanoscale Res. Lett. 13(1), 1–48 (2018)
4. O.P. Das, S.K. Pandey, in 2020 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS). Influence of Conducting Filament Dimension on the Performance of ReRAM Device in the SET state (IEEE, 2020), pp. 13–16
5. O.P. Das, S.K. Pandey, Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device. Semicond. Sci. Technol. 36(9), 095039 (2021)
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