Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ac1052/pdf
Reference39 articles.
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5. High speed unipolar switching resistance RAM (RRAM) technology;Hosoi,2006
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