High-performance Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode with a Self-aligned Shallow Groove and Dual Field-plate-Reference-Cited by-同舟云学术

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High-performance Ga₂O₃ Schottky Barrier Diode with a Self-aligned Shallow Groove and Dual Field-plate

Published:2023-10-20 Issue: Volume: Page:
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Container-title:2023 8th International Conference on Integrated Circuits and Microsystems (ICICM)
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Author:

Han Shida¹,Wang Yuangang¹,Lv Yuanjie¹,Liu Hongyu¹,Han Tingting¹,Dun Shaobo¹,Feng Zhihong¹

Affiliation:

1. Hebei Semiconductor Research Institute,National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10365709/10365561/10365921.pdf?arnumber=10365921

Reference45 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

3. First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases;He;Physical Review B,2006

4. A review of Ga2O3materials, processing, and devices

5. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications;Microelectronics Journal;2024-09

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