Monolithic Integration, Performance, and Comparison of Self-Aligned and Conventional IGZO Thin-Film Transistors on a Flexible Substrate-Reference-Cited by-同舟云学术

Monolithic Integration, Performance, and Comparison of Self-Aligned and Conventional IGZO Thin-Film Transistors on a Flexible Substrate

Published:2022-07 Issue:3 Volume:1 Page:159-166
ISSN:2768-167X
Container-title:IEEE Journal on Flexible Electronics
language:
Short-container-title:IEEE Flex. Electron.

Author:

Corsino Dianne¹,Catania Federica¹^ORCID,Ishida Koichi²^ORCID,Meister Tilo²^ORCID,Ellinger Frank²^ORCID,Cantarella Giuseppe¹^ORCID,Munzenrieder Niko¹^ORCID

Affiliation:

1. Faculty of Science and Technology, Free University of Bozen-Bolzano, Bolzano, Italy

2. Chair of Circuit Design and Network Theory, Technische Universität Dresden (TU Dresden), Dresden, Germany

Funder

Autonomous Province of Bozen-Bolzano-South Tyrol?s Eu- ropean Regional Development Fund

Deutsche Forschungsgemeinschaft

International Joint Cooperation South Tyrol-Switzerland Swiss National Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9552934/9946924/09904604.pdf?arnumber=9904604

Reference31 articles.

1. Extracting small-signal model parameters of silicon MOSFET transistors

2. Roadmap to Gigahertz Organic Transistors

3. High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

4. RF Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates Under Bending Conditions

5. Focused ion beam milling for the fabrication of 160 nm channel length IGZO TFTs on flexible polymer substrates

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