Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs-Reference-Cited by-同舟云学术

Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs

Published:2023-05 Issue:5 Volume:44 Page:773-776
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Khaanghah Niloofar Saeedzadeh¹^ORCID,Corsino Dianne¹^ORCID,Catania Federica¹^ORCID,Costa Júlio²^ORCID,Cantarella Giuseppe³^ORCID,Münzenrieder Niko¹^ORCID

Affiliation:

1. Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano, Italy

2. Sensor Technology Research Centre, University of Sussex, Brighton, Falmer, U.K

3. Department of Physics, Informatics, and Mathematics, University of Modena and Reggio Emilia, Modena, Italy

Funder

South-Tyrol European Regional Development Fund, PhyLab

Joint South Tyrol-Swiss National Science Foundation (SNF) Project FLEXIBOTS

Deutsche Forschungsgemeinschaft (DFG) Project WISDOM II

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10109212/10064308.pdf?arnumber=10064308

Reference22 articles.

1. A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

2. Highly Stable Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors on Deformable Softening Polymer Substrates

3. Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

4. 43.3: A Rugged Conformable Backplane Fabricated with an a-Si:H TFT Array on a Polyimide Substrate

5. AC Performance of Flexible Transparent InGaZnO Thin-Film Transistors and Circuits

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