Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam-Reference-Cited by-同舟云学术

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Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam

Published:2024-03-06 Issue:3 Volume:6 Page:1841-1847
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Catania Federica¹^ORCID,Scattolo Elia²,Giubertoni Damiano²^ORCID,Cian Alessandro²,Shkodra Bajramshahe¹,Lugli Paolo¹,Petti Luisa¹^ORCID,Münzenrieder Niko¹,Cantarella Giuseppe³

Affiliation:

1. Faculty of Engineering, Free University of Bozen-Bolzano, Bozen-Bolzano 39100, Italy

2. Sensors and Devices Center, Bruno Kessler Foundation, Trento 38123, Italy

3. Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Modena 41125, Italy

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01767

Reference36 articles.

1. Flexible Electronics: The Next Ubiquitous Platform

2. Thin-film electronics on active substrates: review of materials, technologies and applications

3. Flexible Electronics: Status, Challenges and Opportunities

4. Multilayer Graphene Epidermal Electronic Skin

5. Printed multifunctional flexible device with an integrated motion sensor for health care monitoring

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