An Approach for Online Estimation of On-State Resistance in SiC MOSFETs Without Current Measurement
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA
2. Weapons and Systems Engineering Department, United States Naval Academy, Annapolis, MD, USA
Funder
Office of Naval Research MVDC Risk Reduction program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10197478/10143680.pdf?arnumber=10143680
Reference31 articles.
1. Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules
2. Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs
3. Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage
4. Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
5. A practical method of designing RC active filters
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3. SiC MOSFET Degradation Monitoring based on Source Inductance Voltage;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
4. An Online Gate Oxide Degradation Monitoring Method for SiC Mosfets Based on Turn-On Gate Voltage Filtering;IEEE Transactions on Power Electronics;2024-05
5. Electro-thermal Trade-off for AC-Current Injection & Series-Clamping-Diodes Based Rds-on Estimation Circuit;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
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