SiC MOSFET Degradation Monitoring based on Source Inductance Voltage
Author:
Affiliation:
1. Aalborg University,Department of Energy,Aalborg,Denmark
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567210.pdf?arnumber=10567210
Reference19 articles.
1. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
2. Reliability Analysis and Redundancy Configuration of MMC With Hybrid Submodule Topologies
3. Condition-Based Maintenance Planning for Systems Subject to Dependent Soft and Hard Failures
4. Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters
5. A Health Indicator of Aluminum Electrolytic Capacitors Based on Strain Sensing
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