Noncontact SiC MOSFET Switching Time Monitoring in DC–DC Converter Using Switching Oscillation Amplitude Feature-Reference-Cited by-同舟云学术

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Noncontact SiC MOSFET Switching Time Monitoring in DC–DC Converter Using Switching Oscillation Amplitude Feature

Published:2024-08 Issue:8 Volume:39 Page:10239-10249
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Xiang Dawei¹^ORCID,Li Yipeng¹^ORCID,Li Hao²^ORCID,Xiao Yunpeng¹^ORCID,Tian Xin²^ORCID,Han Xinyu¹^ORCID

Affiliation:

1. Department of Electrical Engineering, College of Electronic and Information Engineering, Tongji University, Shanghai, China

2. College of Electric Power Engineering, Shanghai University of Electric Power, Shanghai, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Shanghai Rising-Star Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10566488/10505014.pdf?arnumber=10505014

Reference26 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. Analytical and Experimental Evaluation of SiC-Inverter Nonlinearities for Traction Drives Used in Electric Vehicles

3. Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

4. Condition Monitoring Power Module Solder Fatigue Using Inverter Harmonic Identification

5. Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses

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