An Online Gate Oxide Degradation Monitoring Method for SiC Mosfets Based on Turn-On Gate Voltage Filtering
Author:
Affiliation:
1. Department of Energy, Aalborg University, Aalborg, Denmark
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/63/10478432/10423833.pdf?arnumber=10423833
Reference18 articles.
1. An Online Gate Oxide Degradation Monitoring Method for SiC MOSFETs With Contactless PCB Rogowski Coil Approach
2. Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction
3. A Novel Model of the Aging Effect on the ON-State Resistance of SiC Power MOSFETs for High-Accuracy Package-Related Aging Evaluation
4. Monitoring of Gate Leakage Current on SiC Power MOSFETs: An Estimation Method for Smart Gate Drivers
5. In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement
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1. Observations in Strain Sensing of Metallized Film Capacitors for AC filtering during Degradation;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
2. SiC MOSFET Degradation Monitoring based on Source Inductance Voltage;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
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