An Online Gate Oxide Degradation Monitoring Method for SiC MOSFETs With Contactless PCB Rogowski Coil Approach-Reference-Cited by-同舟云学术

An Online Gate Oxide Degradation Monitoring Method for SiC MOSFETs With Contactless PCB Rogowski Coil Approach

Author:

Kang Jianlong¹^ORCID,Zhu Ankang²^ORCID,Chen Yu³^ORCID,Luo Haoze²^ORCID,Yao Lei⁴,Xin Zhen¹^ORCID

Affiliation:

1. School of Electrical Engineering, Hebei University of Technology, Tianjin, China

2. College of Electrical Engineering, Zhejiang University, Hangzhou, China

3. Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

4. AVIC Tianjin Aviation Electro Mechanical Company, Tianjin, China

Funder

Natural Science Foundation of Hebei Province

Hebei University of Technology Interdisciplinary Postgraduate Training Program

North China Electric Power University

State Key Laboratory of Alternate Electrical Power System

ZJU-Hangzhou Global Scientific and Technological Innovation Center

Testing Engineer Yan and the Sustainable & Efficient Electrical Energy Delivery Systems Laboratory at Zhejiang University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

Reference33 articles.

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