In situ Degradation Monitoring of SiC MOSFET Based on Switching Transient Measurement
Author:
Funder
Texas Instruments
SRC TxACE
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://ieeexplore.ieee.org/ielam/41/8998597/8755335-aam.pdf
Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On-Chip Concurrent Device Aging Prognosis and Dielectric Failure Detection for GaN Power Devices;IEEE Transactions on Power Electronics;2024-09
2. Noncontact SiC MOSFET Switching Time Monitoring in DC–DC Converter Using Switching Oscillation Amplitude Feature;IEEE Transactions on Power Electronics;2024-08
3. An Online Gate Oxide Degradation Monitoring Method for SiC Mosfets Based on Turn-On Gate Voltage Filtering;IEEE Transactions on Power Electronics;2024-05
4. Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system;IET Power Electronics;2024-03-15
5. Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs;IEEE Open Journal of Power Electronics;2024
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