Semiconductor Innovations, from Device to System
Author:
Affiliation:
1. Tsmc,Research and Development,Hsinchu,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830423.pdf?arnumber=9830423
Reference17 articles.
1. Graphene and two-dimensional materials for silicon technology
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1. Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes;Nature Nanotechnology;2024-06-21
2. Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration;Materials Science in Semiconductor Processing;2024-06
3. High Bandwidth and Energy Efficient Electrical-Optical System Integration Using COUPE Technology;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
4. Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels;IEEE Transactions on Electron Devices;2024-05
5. NeuroSim V1.4: Extending Technology Support for Digital Compute-in-Memory Toward 1nm Node;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-04
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