Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched <i>V</i>T by Band Alignments of Individual Channels-Reference-Cited by-同舟云学术

Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels

Published:2024-05 Issue:5 Volume:71 Page:3383-3389
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsieh Wan-Hsuan¹^ORCID,Tu Chien-Te¹^ORCID,Chen Yu-Rui¹^ORCID,Huang Bo-Wei¹^ORCID,Chen Wei-Jen¹,Liu Yi-Chun¹^ORCID,Cheng Chun-Yi¹^ORCID,Chou Hung-Chun²^ORCID,Liu C. W.³^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

3. Department of Electrical Engineering, the Graduate Institute of Electronics Engineering, the Graduate Institute of Photonics and Optoelectronics, and the Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

T-Star center project “Future Semiconductor Technology Research Center”

National Science and Technology Council, Taiwan

Ministry of Education (MOE), Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10472969.pdf?arnumber=10472969

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4. High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

5. Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance