High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling-Reference-Cited by-同舟云学术

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High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Bangsaruntip S.,Cohen G. M.,Majumdar A.,Zhang Y.,Engelmann S. U.,Fuller N. C. M.,Gignac L. M.,Mittal S.,Newbury J. S.,Guillorn M.,Barwicz T.,Sekaric L.,Frank M. M.,Sleight J. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424364.pdf?arnumber=5424364

Cited by 102 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Heat Generation Counted by Phonon Absorption and Emission in GAA FET under the Framework of Non-Equilibrium Green's Function Method;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

4. Comprehensive Analysis of Sheet Thickness Scaling on the Performance of Nanosheet nFETs;IEEE Transactions on Electron Devices;2024-05

5. Monolithic 3-D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs With Matched VT by Band Alignments of Individual Channels;IEEE Transactions on Electron Devices;2024-05

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