Symmetrical V<sub>TH</sub>/R<sub>ON</sub> Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs-Reference-Cited by-同舟云学术

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Symmetrical V_TH/R_ON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs

Published:2022-11-07 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Zagni Nicolò¹,Cioni Marcello¹,Castagna Maria Eloisa²,Moschetti Maurizio²,Iucolano Ferdinando²,Verzellesi Giovanni³,Chini Alessandro¹

Affiliation:

1. University of Modena and Reggio Emilia,"Enzo Ferrari",Engineering Department,Modena,Italy,41125

2. STMicroelectronics,Catania,Italy,95121

3. University of Modena and Reggio Emilia,Department of Sciences and Methods for Engineering and EN&TECH,Reggio Emilia,Italy,42122

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955267.pdf?arnumber=9955267

Reference11 articles.

1. Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2. Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

3. GaN-based power devices: Physics, reliability, and perspectives

4. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

5. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs;IEEE Transactions on Power Electronics;2024-11

2. Hole Virtual Gate Model Explaining Surface-Related Dynamic R_ON in p-GaN Power HEMTs;IEEE Electron Device Letters;2024-05

3. Preconditioning of Ohmic p-GaN power HEMT for reproducible V measurements;Solid-State Electronics;2024-01

4. Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

5. Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2023-07

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