Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs-Reference-Cited by-同舟云学术

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Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs

Published:2023-10-08 Issue: Volume: Page:1-5
ISSN:
Container-title:2023 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Zagni Nicolò¹,Chini Alessandro¹,Verzellesi Giovanni²,Cioni Marcello¹,Giorgino Giovanni¹,Nicotra Maria Concetta³,Eloisa Castagna Maria³,Iucolano Ferdinando³

Affiliation:

1. University of Modena and Reggio Emilia,Department of Engineering "Enzo Ferrari" (DIEF),Italy

2. University of Modena and Reggio Emilia,Department of Sciences and Methods for Engineering (DISMI) and EN&TECH,Italy

3. STMicroelectronics,Catania,Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10477668/10477631/10477714.pdf?arnumber=10477714

Reference11 articles.

1. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

2. Stability and Reliability of Lateral GaN Power Field-Effect Transistors

3. Symmetrical V_TH/R_ON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs

4. Gate-Bias Induced R_ON Instability in p-GaN Power HEMTs

5. Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hole Virtual Gate Model Explaining Surface-Related Dynamic R_ON in p-GaN Power HEMTs;IEEE Electron Device Letters;2024-05

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