Impact of Gate Offset on PBTI of p-GaN Gate HEMTs
Author:
Affiliation:
1. Massachusetts Institute of Technology,Microsystems Technology Laboratories,Cambridge,MA,U.S.A,02139
2. Texas Instruments,Analog Technology Development,Dallas,TX,U.S.A,75243
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764442.pdf?arnumber=9764442
Reference26 articles.
1. Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation
2. Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs
3. Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
4. Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs
5. Gate Reliability of p-GaN HEMT With Gate Metal Retraction
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1. Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure;Applied Physics Letters;2024-06-10
2. Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
3. Symmetrical VTH/RON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07
4. Gate-geometry dependence of dynamic Vt in p-GaN gate HEMTs;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22
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