Gate Reliability of p-GaN HEMT With Gate Metal Retraction-Reference-Cited by-同舟云学术

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Gate Reliability of p-GaN HEMT With Gate Metal Retraction

Published:2019-11 Issue:11 Volume:66 Page:4829-4835
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tallarico A. N.^ORCID,Stoffels S.,Posthuma N.^ORCID,Bakeroot B.^ORCID,Decoutere S.^ORCID,Sangiorgi E.^ORCID,Fiegna C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8886611/08842623.pdf?arnumber=8842623

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime;IEEE Electron Device Letters;2024-09

2. p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics;IEEE Electron Device Letters;2024-07

3. Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

4. Positive V_TH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage;IEEE Transactions on Power Electronics;2024-06

5. Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering;physica status solidi (a);2024-04-21

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